1. Which memory storage is widely used in PCs and Embedded Systems? A. SRAM B. DRAM C. Flash memory D. EEPROM Answer: B Clarification: DRAM is used in PCs and Embedded systems because of its low cost. SRAM, flash memory and EEPROM are more costly than DRAM.
2. Which of the following memory technology is highly denser? A. DRAM B. SRAM C. EPROM D. Flash memory Answer: A Clarification: DRAM is highly denser and cheaper because it only uses a single capacitor for storing one bit.
3. Which is the storage element in DRAM? A. inductor B. capacitor C. resistor D. mosfet Answer: B Clarification: DRAM uses a small capacitor whose voltage represents a binary zero which is used as a storage element in DRAM in which a single transistor cell is used to store each bit of data.
4. Which one of the following is a storage element in SRAM? A. capacitor B. inductor C. transistor D. resistor Answer: C Clarification: Four to six transistors are used to store a single bit of data and form a flip-flop logic gate and thus SRAM is faster in accessing data.
5. Which of the following is more volatile? A. SRAM B. DRAM C. ROM D. RAM Answer: B Clarification: DRAM is said to be more volatile because it has a capacitor as its storage element in which the data disappears when the capacitor loses its charge so even when the device is powered the data can be lost.
6. What is the size of a trench capacitor in DRAM? A. 1 Mb B. 4-256 Mb C. 8-128 Mb D. 64-128 Mb Answer: B Clarification: Trench capacitor can store from 4-256 Mb but planar capacitor can store up to 1 Mb.
7. Which of the following capacitor can store more data in DRAM? A. planar capacitor B. trench capacitor C. stacked-cell D. non-polar capacitor Answer: C Clarification: Stacked-cell can store greater than 1 Gb. Planar capacitor can store up to 1 Mb and trench capacitor can store 4-256 Mb.
8. In which of the memories, does the data disappear? A. SRAM B. DRAM C. Flash memory D. EPROM Answer: B Clarification: Both SRAM and DRAM are volatile memories and flash memory and EPROM are non-volatile memories. DRAM has a storage element as a capacitor whose charge loses gradually thereby losing data.
9. Which of the following is the main factor which determines the memory capacity? A. number of transistors B. number of capacitors C. size of the transistor D. size of the capacitor Answer: A Clarification: The chip capacity is dependent on the number of transistors which can be fabricated on the silicon, and DRAM offers more storage capacity than SRAM.
10. What does VRAM stand for? A. video RAM B. verilog RAM C. virtual RAM D. volatile RAM Answer: A Clarification: Video RAM is a derivative of DRAM. It functions as a DRAM and has additional functions to access data for video hardware for creating the display.
11. What does TCR stand for? A. temperature-compensated refresh B. temperature-compensated recovery C. texas CAS-RAS D. temperature CAS-RAS Answer: A Clarification: The temperature-compensated refresh is one of the refreshing techniques used for extending the battery life by reducing the refresh rate.
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Interviews for Top Jobs at Micron Technology
Dram Product Engineer Interview
I applied online. The process took 1 week. I interviewed at Micron Technology (Taichung) in May 2020
Interview
The first interview was through Zoom.First, they will ask you to introduce yourself, and then they started asking professional knowledge of MOSFET and logic in the whole interview process.The whole interview process took about 1~2 hours.
- What is the structure of MOSFET?
Dram Product Engineer Interview
I applied online. The process took 4 weeks. I interviewed at Micron Technology in Mar 2022
Interview
No reply after second interview. Both interviews started from self introduction and some general questions. After that, they introduced about the job and test me with technical questions, usually one question per interview in my case.
- DRAM CMOS circuit, decimal to binary programming code, basic CMOS circuit concept
Getting prepared for Random-access memory (RAM) job? Do not panic, we will guide you how and what to answer in your interview. If you are preparing for Random-access memory (RAM) job interview then go through Wisdomjobs interview questions and answers page. Random-access memory (RAM) is a type of data storage used in computer systems. It is a physical object that sits on motherboard. Data stored in RAM is volatile which means if the computer is turned off then data is lost. Huge demand for Random-access memory (RAM) developers in the present situation. RAM is found is printers, smartphones, tablets, PCs, servers and more. Please have a look at Random-access memory (RAM) interview questions and answers page to win your interview.
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4. Which one of the following is a storage element in SRAM? A. capacitor B. inductor C. transistor D. resistor Answer: C Clarification: Four to six transistors are used to store a single bit of data and form a flip-flop logic gate and thus SRAM is faster in accessing data.
7. Which of the following capacitor can store more data in DRAM? A. planar capacitor B. trench capacitor C. stacked-cell D. non-polar capacitor Answer: C Clarification: Stacked-cell can store greater than 1 Gb. Planar capacitor can store up to 1 Mb and trench capacitor can store 4-256 Mb.
3. Which is the storage element in DRAM? A. inductor B. capacitor C. resistor D. mosfet Answer: B Clarification: DRAM uses a small capacitor whose voltage represents a binary zero which is used as a storage element in DRAM in which a single transistor cell is used to store each bit of data.
9. Which of the following is the main factor which determines the memory capacity? A. number of transistors B. number of capacitors C. size of the transistor D. size of the capacitor Answer: A Clarification: The chip capacity is dependent on the number of transistors which can be fabricated on the silicon, and DRAM offers more storage capacity than SRAM.
1. Which memory storage is widely used in PCs and Embedded Systems? A. SRAM B. DRAM C. Flash memory D. EEPROM Answer: B Clarification: DRAM is used in PCs and Embedded systems because of its low cost. SRAM, flash memory and EEPROM are more costly than DRAM.
